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Infrared Emitting Diodes(GaAs) K DNH OESI EL-55L DIMENSIONS The EL-55L is a high-power GaAs IRED mounted in a clear plastic package. This LED emits infrared light through two plastic lenses on both sides of the package is ideally suited for use with VTR tape-end sensors. (Unit : mm) FEATURES U ompact C ULow profile package U ow-cost L USidelooking plastic package ULong-lead type APPLICATIONS UVTR type-end sensor MAXIMUM RATINGS Item Reverse voltage Forward current *1 Pulse forward current Power dissipation Operating temp. Storage temp. *2 Soldering temp. (Ta=2...) 5 Symbol VR F I F IP PD Topr. Tstg. Tsol. Rating 5 50 1 75 -25~+85 -30~+85 260 Unit V mA A mW ... ... ... *1. pulse width tw Z100 *I sec.period 10msec. T= *2. For MAX.5 seconds at the position of 2 mm from the package ELECTRO-OPTICAL CHARACTERISTICS Item Forward voltage Reverse current Capacitance Radiant intensity Peak emission wavelength Spectral bandwidth 50% Half angle (Ta=2...) 5 Symbol VF R I Ct PO *Ip **I *E Conditions F= I 50mA VR=5V f=1MHz F= I 20mA F= I 20mA F= I 20mA Min. Typ. 1.3 25 2.0 940 50 - Max. 1.5 10 Unit. V *I A pF mW/sr nm nm deg. 0.7 - - - 1- Infrared Emitting Diodes(GaAs) EL-55L Power dissipation Vs. Ambient temperature Radiant intensity Vs. Forward current Relative radiant intensity Vs. Ambient temperature Relative intensity Vs. Wavelength Forward current vs. Forward voltage Radiant Pattern - 2- |
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